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| Code | photo_camera | Remains | shopping_cart | 1 | 2 | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 049692 |  | Diode 5mA 16kV 0.08ms | total: 960 pcs маг ДП: 960 pcs |
| Быстрый диод | Diode | Одиночный | 5 мА | 16 kV | 80 нс | DO312 | ||||
| 031726 |  | Diode 0.15A 100V 4ns 200mW | total: 10650 pcs маг ДП: 10650 pcs |
| Быстрый диод | Diode | Одиночный | 0.15 А | 75 V | 4 нс | SOD123 | ||||
| 050632 | | Diode 0.15A 75V | total: 60000 pcs маг ДП: 60000 pcs |
| FOSAN | Быстрый диод | Diode | Одиночный | 0.15 А | 75 V | 4 нс | SOD123 | |||
| 016327 |  | Schottky diode 2X0.2A 30V common anode | total: 6230 pcs маг ДП: 6230 pcs |
| Диод Шоттки | 2 Diode | Общий анод | 0.2 А | 30 V | SOT23 | |||||
| 026721 |  | Schottky diode 0.2A 30V SOT23 Single | total: 6800 pcs маг ДП: 800 pcs |
| Диод Шоттки | Diode | Одиночный | 0.2 А | 30 V | SOT23 | |||||
| 050633 | | Schottky diode 2X0.2A 30V series connection | total: 21990 pcs маг ДП: 990 pcs |
| FOSAN | Диод Шоттки | 2 Diode | Полумост | 0.2 А | 30 V | SOT23 | ||||
| 003417 |  | Diode LL VR = 75V, IF = 200mA, IFRM = 450mA, IFSM = 4A t = 4ns | total: 62400 pcs маг ДП: 62400 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.2 А | 75 V | 4 нс | SOD80C | |||
| 050638 |  | Diode Two diodes in series Vr=80B, If=0.2A | total: 15020 pcs маг ДП: 15020 pcs |
| FOSAN | Быстрый диод | 2 Diode | Полумост | 0.2 А | 80 V | 4 нс | SOT23 | |||
| 026725 | | Diode 0.2A 100V 15ns serial connection | total: 710 pcs маг ДП: 710 pcs |
| TASUND | Быстрый диод | 2 Diode | Полумост | 0.2 А | 100 V | 15 нс | SOT23 | |||
| 027650 |  | Diode 0.2A 100V | total: 155015 pcs маг ДП: 90015 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.2 А | 100 V | 4 нс | DO35 | |||
| 024726 | | Diode 0.2A 200V Sod123 | total: 11250 pcs маг ДП: 11250 pcs |
| CJ | Быстрый диод | Diode | Одиночный | 0.2 А | 200 V | 50 нс | SOD123 | |||
| 005836 | | Diode 0.2A 250V 50ns | total: 9788 pcs маг ДП: 9788 pcs |
| Быстрый диод | Diode | Одиночный | 0.2 А | 250 V | 50 нс | DO35 | ||||
| 027575 | | Diode Two diodes with a common anode. Vr = 75V, If = 215mA Cd = 2pF trr = 4ns, High-speed switching diodes | total: 8790 pcs маг ДП: 2790 pcs |
| Быстрый диод | 2 Diode | Общий анод | 0.215 А | 75 V | 4 нс | SOT23 | ||||
| 004006 |  | Diode Two diodes with a common cathode. Vr = 75V, If = 215mA Cd = 1.5pF trr = 4ns, High-speed switching diodes | total: 7360 pcs маг ДП: 7360 pcs |
| Быстрый диод | 2 Diode | Общий катод | 0.215 А | 100 V | 4 нс | SOT23 | ||||
| 031507 |  | Diode Diode assembly two half-bridge 300V 225MA 50ns | total: 304 pcs маг ДП: 304 pcs |
| DIODES | Быстрый диод | 4 Diode | 2 полумоста | 0.225 А | 300 V | 50 нс | SOT23-6 | |||
| 005954 |  | Diode 0.2A 200V 50ns | total: 19940 pcs маг ДП: 19940 pcs |
| SEMTECH | Быстрый диод | Diode | Одиночный | 0.25 А | 200 V | 50 нс | SOD80C | |||
| 023535 |  | Diode 0.15A 100V 4ns 200mW | total: 2050 pcs маг ДП: 2050 pcs |
| Быстрый диод | Diode | Одиночный | 0.3 А | 100 V | 4 нс | SOD323 | ||||
| 032970 |  | Diode | total: 31760 pcs маг ДП: 31760 pcs |
| Быстрый диод | Diode | Одиночный | 0.3 А | 100 V | 4 нс | SOD523 | ||||
| 037086 |  | Diode 0.35A 12kV is used in magnetron power circuits, for microwave ovens | total: 125 pcs маг ДП: 125 pcs |
| SK | Выпрямительный диод | Diode | Одиночный | 0.35 А | 12 kV | |||||
| 029211 | | Diode 225mA 250V 50ns serial connection | total: 1360 pcs маг ДП: 1360 pcs |
| CJ | Быстрый диод | 2 Diode | Полумост | 0.4 А | 200 V | 50 нс | SOT23 | |||
| 002105 |  | Schottky diode 20V 1A/25Ap | total: 20110 pcs маг ДП: 1110 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 20 V | DO41 | |||||
| 007209 |  | Schottky diode Schottky diode 1A 20V | total: 3130 pcs маг ДП: 3130 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 20 V | SMA | |||||
| 007194 | | Schottky diode 30V 1A/25Ap | total: 5059 pcs маг ДП: 5059 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 30 V | DO41 | |||||
| 004808 | | Schottky diode 40V 1A/25Ap | total: 52085 pcs маг ДП: 33085 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | DO41 | |||||
| 006661 |  | Schottky diode Schottky diode 1A 40V | total: 13407 pcs маг ДП: 13407 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SMA | |||||
| 029028 | | Schottky diode 40V 1A | total: 26850 pcs маг ДП: 26850 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD323 | |||||
| 036054 |  | Schottky diode Diode 1A, 40V. | total: 29550 pcs маг ДП: 29550 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123-FL | |||||
| 036057 | | Schottky diode Schottky diode 1A, 40V. | total: 4870 pcs маг ДП: 1870 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD523 | |||||
| 040118 | | Schottky diode Schottky diode 1A, 40V. | total: 13100 pcs маг ДП: 13100 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123 | |||||
| 050637 | | Schottky diode Schottky diode 1A, 40V. | total: 24750 pcs маг ДП: 24750 pcs |
| FOSAN | Диод Шоттки | Diode | Одиночный | 1 А | 40 V | SOD123 | ||||
| 029199 |  | Diode | total: 26471 pcs маг ДП: 1471 pcs |
| MIC | Выпрямительный диод | Diode | Одиночный | 1 А | 50 V | DO41 | ||||
| 004240 | | Schottky diode Schottky diode 1A, 60B | total: 44000 pcs маг ДП: 44000 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 60 V | SMA | |||||
| 029196 | | Schottky diode 1A 60V | total: 6750 pcs маг ДП: 6750 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 60 V | DO41 | ||||
| 016328 | | Schottky diode Schottky diode 1A, 80B | total: 7870 pcs маг ДП: 7870 pcs |
| Диод Шоттки | Diode | Одиночный | 1 А | 80 V | SMA | |||||
| 029198 | | Schottky diode 1A 100V | total: 4730 pcs маг ДП: 4730 pcs |
| MIC | Диод Шоттки | Diode | Одиночный | 1 А | 100 V | DO41 | ||||
| 007175 |  | Diode 1A 400V 35ns | total: 29867 pcs маг ДП: 11867 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 400 V | 35 нс | DO41 | ||||
| 029200 | | Diode | total: 29480 pcs маг ДП: 4980 pcs |
| MIC | Выпрямительный диод | Diode | Одиночный | 1 А | 400 V | DO41 | ||||
| 005635 |  | Diode 1A 600V 35ns | total: 14930 pcs маг ДП: 4930 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 600 V | 35 нс | DO41 | ||||
| 006780 |  | Diode 1A 600V 150ns | total: 17320 pcs маг ДП: 5320 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 600 V | 150 нс | DO41 | ||||
| 004328 |  | Diode 1A 1000V | total: 51280 pcs маг ДП: 51280 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | 1.8 мкс | SMA | ||||
| 005903 |  | Diode 1A 1000V 75ns | total: 16200 pcs маг ДП: 3200 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | DO41 | ||||
| 006200 |  | Diode 1A 1000V | total: 6650 pcs маг ДП: 6650 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | R-1 | |||||
| 011731 | | Diode 1A 1000V | total: 9490 pcs маг ДП: 9490 pcs |
| MIC | Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | DO41 | |||
| 016666 | | Diode 1A 1000V 75ns | total: 66610 pcs маг ДП: 58610 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | SMA | ||||
| 028275 | | Diode | total: 112200 pcs маг ДП: 112200 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | SOD123-FL | |||||
| 029185 | | Diode | total: 16554 pcs маг ДП: 1554 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 75 нс | DO41 | ||||
| 029192 | | Diode | total: 11840 pcs маг ДП: 11840 pcs |
| ONOK | Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | DO41 | ||||
| 034313 | | Diode 1000V 1A 500ns | total: 7090 pcs маг ДП: 7090 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | SOD123-FL | ||||
| 036055 |  | Diode 1A, 1000V | total: 82150 pcs маг ДП: 82150 pcs |
| Выпрямительный диод | Diode | Одиночный | 1 А | 1 kV | SMAF | |||||
| 037637 | | Diode 1A 1000V | total: 13000 pcs маг ДП: 13000 pcs |
| Быстрый диод | Diode | Одиночный | 1 А | 1 kV | 500 нс | SOD123-FL |
Rectifier diodes- diodes designed to convert alternating current into direct current.
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
The frequency range of the rectifier diodes is small. When converting industrial alternating current, the operating frequency is 50 Hz, the limiting frequency of the rectifier diodes does not exceed 20 kHz.
The recovery time of the reverse resistance of the base of a diode is a transient process that occurs when the diode switches from a conducting state (direct) to a closed state. Rectifier diodes are typically over 500 ns.
Conditionally tofast diodesinclude rectifier diodes with a base reverse resistance recovery time of no more than 500 ns.
Schottky diode- semiconductor diode with low voltage drop during direct connection. Named after the German physicist Walter Schottky. In the special literature, a more complete name is often used - Schottky Barrier Diode (DSB).
Schottky diodes use a metal-semiconductor junction as a Schottky barrier, unlike conventional diodes, which use a pn junction. A metal-semiconductor junction has a number of special properties (different from the properties of a semiconductor p-n junction). These include: low forward voltage drop, high leakage current, very low reverse recovery charge. The latter is explained by the fact that, in comparison with the conventional p-n junction, such diodes have no diffusion associated with the injection of minority carriers, i.e. they work only on the main carriers, and their performance is determined only by the barrier capacity.
* the full version of the article can be found atlink
