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Whole catalog
↠ Active ingredients
↠ Transistors, modules
↠ Field effect transistors
Transistor IRLR2705 Field-effect transistor N-Канальный Логический уровень V dss = 55 V ; R ds = 0.04 Ohm ; I d 25°C = 24 A ; I d 100°C = 15 A; R°C/W = 2.7°C/W; P d = 46 W
Expected price:
14,40
UAH
from 1 pc :
—
14,40
UAH
from 50 pcs :
—
12,96
UAH
( -10,0%)
from 200 pcs :
—
12,96
UAH
( -10,0%)
Prices are indicated at the time of product availability and may change upon receipt
Производитель
International Rectifier (IR)
Корпус
DPAK
Структура
N
Схема соединения
Одиночный
V(BR)DSS - напряжение пробоя сток-исток
55 V
Vgs - напряжение затвор-исток
±16 V
Id25 - постоянный ток стока при 25°C
28 А
Id75(100) - постоянный ток стока при 75(100)°C
20 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V
40 мОм
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=5V
51 мОм
VGS(th) - пороговое напряжение затвор-исток (диапазон)
1 ... 2 V
Мощность рассеяния при 25°C
68 Вт
Channel: N-Канальный Logic level: ДА Drain-source breakdown voltage, V dss : 55 V On-drain drain-source resistance, R ds : 0.04 Ohm Constant drain current, at temperature = 25°C, I d 24 A Permanent drain current, at temperature = 100°C, I d 15 A tr> Maximum die-to-case thermal resistance, R°C/W: 2.7°C/W Maximum power dissipation, P d : 46 Tue
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.
If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП
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