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Whole catalog
↠ Active ingredients
↠ Transistors, modules
↠ Field effect transistors
Transistor IRF640PBF Field-effect transistor N-Канальный V dss = 200 V ; R ds = 0.18 Ohm ; I d 25°C = 18 A ; I d 100°C = 11 A; R°C/W = 1°C/W; P d = 125 W
Expected price:
30,00
UAH
from 1 pc :
—
30,00
UAH
from 50 pcs :
—
27,00
UAH
( -10,0%)
from 200 pcs :
—
24,00
UAH
( -20,0%)
Prices are indicated at the time of product availability and may change upon receipt
Производитель
International Rectifier (IR)
Корпус
TO220
Структура
[1 N-Channel]
V(BR)DSS - напряжение пробоя сток-исток
200 V
Vgs - напряжение затвор-исток
±20 V
Id25 - постоянный ток стока при 25°C
18 А
Rds(on)25 - сопротивление сток-исток при 25°C,Vgs=10V
0.18 Ом
Мощность рассеяния при 25°C
125 Вт
Рабочая температура
-55°C
Channel: N-Канальный Logic level: НЕТ Drain-source breakdown voltage, V dss : 200 V On-drain drain-source resistance, R ds : 0.18 Ohm Constant drain current, at temperature = 25°C, I d 18 A Permanent drain current, at temperature = 100°C, I d 11 A tr> Maximum die-to-case thermal resistance, R°C/W: 1°C/W Maximum power dissipation, P d : 125 Tue
The data presented in the product description are for reference only and may differ from those indicated by the manufacturer.
To carry out technical calculations and obtain the exact parameters of the goods, use the datasheets from the manufacturer's website.
If you need additional information, or you found an error in the description, or have other questions about this product, then our manager will help you: Евгений ЗП
unknown
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